ZXMD63P02X
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V DSS
-20
V
Gate- Source Voltage
V GS
± 12
V
Continuous Drain Current (V GS =4.5V; T A =25°C)(b)(d)
I D
-1.7
A
(V GS =4.5V; T A =70°C)(b)(d)
-1.35
Pulsed Drain Current (c)(d)
I DM
-9.6
A
Continuous Source Current (Body Diode)(b)(d)
I S
-1.4
A
Pulsed Source Current (Body Diode)(c)(d)
I SM
-9.6
A
Power Dissipation at T A =25°C (a)(d)
P D
0.87
W
Linear Derating Factor
6.9
mW/°C
Power Dissipation at T A =25°C (a)(e)
P D
1.04
W
Linear Derating Factor
8.3
mW/°C
Power Dissipation at T A =25°C (b)(d)
P D
1.25
W
Linear Derating Factor
10
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)(d)
Junction to Ambient (b)(d)
Junction to Ambient (a)(e)
SYMBOL
R θ JA
R θ JA
R θ JA
VALUE
143
100
120
UNIT
°C/W
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ISSUE 1 - JUNE 2004
2
相关PDF资料
ZXMD63P03XTC MOSFET DUAL P-CHAN 30V 8MSOP
ZXMHC10A07T8TA MOSFET H-BRIDGE N/P-CH 100V SM8
ZXMHC3A01N8TC MOSFET H-BRIDGE COMPL 8-SOIC
ZXMHC3F381N8TC MOSFET COMPL H-BRIDGE 30V 8-SOIC
ZXMHC6A07N8TC MOSFET COMPL H-BRIDGE 60V 8-SOIC
ZXMHC6A07T8TA MOSFET H-BRIDGE N/P-CH 60V SM8
ZXMHN6A07T8TA MOSFET N-CHAN 60V 1.6A SOT223-8
ZXMN0545G4TA MOSFET N-CH 450V 140MA SOT-223
相关代理商/技术参数
ZXMD63P03X 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63P03X_05 制造商:ZETEX 制造商全称:ZETEX 功能描述:DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63P03XTA 功能描述:MOSFET Dual 30V P Chl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMD63P03XTC 功能描述:MOSFET Dual 30V P Chl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMD65N02N8TA 功能描述:MOSFET N-CHAN DUAL 20V 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道(双) FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds(最大)@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A,10V Id 时的 Vgs(th)(最大):3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR
ZXMD65N03N8 制造商:ZETEX 制造商全称:ZETEX 功能描述:DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD65N03N8TA 功能描述:MOSFET N-CHAN DUAL 30V 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道(双) FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds(最大)@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A,10V Id 时的 Vgs(th)(最大):3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR
ZXMD65P02N8 制造商:ZETEX 制造商全称:ZETEX 功能描述:DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET